Direct free-hole absorption and transient optical properties of the solid-state plasma in Ge
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Direct transitions of holes between the subbands of the valence band, which are normally negligible compared to valence-conduction interband transitions, are shown to become important at sufficiently high hole concentrations and temperatures. The inclusion of this process in a theoretical model recently proposed for the generation and evolution of laser-induced electron-hole plasma in Ge eliminates some of its major limitations. 1981 The American Physical Society.