Direct free-hole absorption and transient optical properties of the solid-state plasma in Ge Academic Article uri icon


  • Direct transitions of holes between the subbands of the valence band, which are normally negligible compared to valence-conduction interband transitions, are shown to become important at sufficiently high hole concentrations and temperatures. The inclusion of this process in a theoretical model recently proposed for the generation and evolution of laser-induced electron-hole plasma in Ge eliminates some of its major limitations. 1981 The American Physical Society.

published proceedings

  • Physical Review B

author list (cited authors)

  • Leung, C. Y., & Scully, M. O.

citation count

  • 8

complete list of authors

  • Leung, Chung Yee||Scully, Marlan O

publication date

  • June 1981