Electron-holepair generation and hysteresis in semiconductors
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We consider the electron-hole-pair generation and the resulting free-carrier-density buildup in a semiconductor irradiated with laser beams whose frequencies are below the band gap. Using a simple model, we show that the free-carrier density may exhibit hysteresis and that when placed in a cavity, the semiconductor causes optical multistability at relatively low input cw intensities. For InSb the model predicts hysteresis at or above 100 W / cm2. 1983 The American Physical Society.
author list (cited authors)
Eli, A., Scully, M. O., & O'Hare, J. M.
complete list of authors
Elçi, A||Scully, MO||O'Hare, JM