Many-body theory of quantum interference effects in semiconductor quantum well lasers
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abstract
Collective excitations resulting from the Coulomb interaction of electrons and holes are known to determine the spectrum of gain or absorption for semiconductor laser in interband transitions. In this article, the results of numerical simulation of gain as function of the detuning of the laser field for different values of the subband dispersion are presented. Gain was exhibited in a narrow region close to the resonance surrounded by the regions of absorption, which implies the absence of inversion. The calculations without the account of Coulomb interaction would predict no gain, indicating that this based on the absorption cancellation via Fano interference of tunneling processes.
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Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178)
Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178)
author list (cited authors)
Nikonov, D. E., Imamoglu, A., Schmidt, H., & Scully, M. O.