Oriented molecular sieve films by heteroepitaxial growth Conference Paper uri icon

abstract

  • In this report, we demonstrate the use of epitaxial growth of one molecular sieve (ETS-10) on another (ETS-4) to fabricate preferentially oriented molecular sieve films. Highly b-oriented but poorly intergrown ETS-4 precursor layer is first prepared. Then by the secondary growth method, highly a-/b-oriented ETS-10 molecular sieve film is fabricated under a hydrothermal condition that leads to heteroepitaxial growth of ETS-10 on ETS-4. X-ray diffraction and scanning electron microscopy (SEM) are utilized to determine the preferred orientation.

published proceedings

  • 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

author list (cited authors)

  • Jeong, H. K., Krohn, J., Sujaoti, K., & Tsapatsis, M.

complete list of authors

  • Jeong, HK||Krohn, J||Sujaoti, K||Tsapatsis, M

publication date

  • December 2003