Wideband dual‐bandpass 0.18‐µm CMOS SPDT switch utilizing dual‐band resonator concept Academic Article uri icon

abstract

  • © 2018 Wiley Periodicals, Inc. A fully integrated wideband concurrent dual-band single-pole double-throw (SPDT) switch with integrated dual-band band-pass filtering has been developed over two wide bandwidths around 24 and 60 GHz in a 0.18-µm SiGe BiCMOS process. The developed concurrent dual-wideband SPDT switch is configured to make it approximately equivalent to a dual-band resonator in the on-state operation. It exhibits measured insertion losses and isolations of 5.4 and 31.4 dB, and 5.2 and 16.5 dB at 24 and 60 GHz, respectively. The measured peak stop-band rejection between the two pass-bands is 26 dB at 42.3 GHz. With single-tone 24- or 60-GHz input, the measured input 1-dB compression points (P1dB) are 20.4 and 17.1 dBm at 24 and 60 GHz, respectively. For concurrent dual-tone 24- and 60-GHz input, the measured input P1dBs are 17 and 14.5 dBm at 24 and 60 GHz, respectively. The measured input third-order intercept points are 29.4 and 26.8 dBm at 24 and 60 GHz, respectively.

author list (cited authors)

  • Um, Y., & Nguyen, C.

citation count

  • 2

publication date

  • May 2018

publisher