A Low Phase Noise Wide-Tuning Range Class-F VCO Based on a Dual-Mode Resonator in 65nm CMOS Conference Paper

abstract

• 2018 IEEE. This paper presents a low phase noise wide tuning range Class-F voltage controlled oscillator using a dual-mode resonator. In comparison to other conventional wideband oscillators the proposed capacitively/inductively-coupled resonator will integrate the benefits of Class-F voltage control oscillators and dual-mode switching networks to obtain simultaneous low phase noise and wide-tuning range. The proposed structure prototyped in a 65nm TSMC CMOS technology, shows a 2.14-4.22GHz continuous tuning range, phase noise figure-of-merit (FoM) of 192.7dB at 2.3GHz and better than 188dB across the entire operating frequency range. The oscillator consumes 15-16.4mW from a 0.6V supply and occupies an active area of 0.7mm2.

name of conference

• 2018 IEEE Radio and Wireless Symposium (RWS)

authors

• Entesari, Kamran

published proceedings

• 2018 IEEE RADIO & WIRELESS SYMPOSIUM (RWS)

author list (cited authors)

• Dhamani, N., Sepidband, P., & Entesari, K.

citation count

• 4

complete list of authors

• Dhamani, Naushad||Sepidband, Paria||Entesari, Kamran

publication date

• January 2018

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Radio and Wireless Symposium, RWS  Journal

keywords

• Class-f Oscillator
• Cmos
• Multiband
• Phase Noise
• Transformer
• Vco
• Wide-tuning Range

Digital Object Identifier (DOI)

• 10.1109/rws.2018.8305009

International Standard Book Number (ISBN) 13

• 9781538607091

URI

• https://hdl.handle.net/1969.1/161460

start page

• 277

end page

• 280

volume

• 2018-January

URL

• http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=8300289