Guard-Ring Dependence of Noise Characteristics for Single-Photon Avalanche Diodes in a Standard CMOS Technology Conference Paper uri icon

abstract

  • © 2017 IEEE. We investigate the effects of guard-ring structure on noise characteristics for CMOS-compatible single-photon avalanche diodes (SPADs). SPADs with different guard-ring structures are fabricated in standard 0.18-μm CMOS technology and the noise characteristics as dark current, dark-count rate and afterpulsing probability are measured and analyzed.

author list (cited authors)

  • Rhim, J., Yu, K., Chang, P., Palermo, S., Li, C., Fiorentino, M., Beausoleil, R., & Lee, M.

citation count

  • 2

publication date

  • August 2017

publisher