Unraveling the Near- and Far-Field Relationship of 2D Surface Enhanced Raman Spectroscopy Substrates Using Wavelength-Scan Surface-Enhanced Raman Excitation Spectroscopy Academic Article uri icon

abstract

  • 2017 American Chemical Society. Lithographic and nonlithographic two-dimensional (2D) substrates for surface-enhanced Raman spectroscopy (SERS) have gained enormous popularity as analytical platforms for detection and identification of various analytes. However, their near- and far-field properties in most cases remain poorly understood. We have previously developed a metal nanopillar film over nanospheres (FON) platform exhibiting Raman enhancement factors of 107. These substrates have a reproducible and predictable localized surface plasmon resonance throughout the entire visible region and much of the near-IR region of the electromagnetic spectrum. Extending upon these results, we have utilized wavelength-scan surface-enhanced Raman excitation spectroscopy to unravel the relationship between near- and far-field properties of FON surface-enhanced Raman spectroscopy substrates. We examined by scanning electron microscopy FONs fabricated by either stationary (ST-FONs) or spun (SP-FONs) metal deposition to examine the interrelationships of nanoscale structure and near- and far-fied properties. We demonstrate that the line width and spectral position of the far-field and near-field resonances of ST- and SP-FONs directly depend on the nanofeature distribution at the metallic surface. In particular, we show that the actual nanofeature morphology and distribution directly impact the spectral alignment of the far-field and near-field resonances.

published proceedings

  • JOURNAL OF PHYSICAL CHEMISTRY C

altmetric score

  • 1.5

author list (cited authors)

  • Kurousld, D., Large, N., Chiang, N., Henry, A., Seideman, T., Schatz, G. C., & Van Duyne, R. P.

citation count

  • 19

complete list of authors

  • Kurousld, Dmitry||Large, Nicolas||Chiang, Naihao||Henry, Anne-Isabelle||Seideman, Tamar||Schatz, George C||Van Duyne, Richard P

publication date

  • July 2017