Error-Correcting Schemes with Dynamic Thresholds in Nonvolatile Memories Conference Paper

abstract

• Predetermined fixed thresholds are commonly used in nonvolatile memories for reading binary sequences, but they usually result in significant asymmetric errors after a long duration, due to voltage or resistance drift. This motivates us to construct error-correcting schemes with dynamic reading thresholds, so that the asymmetric component of errors are minimized. In this paper, we discuss how to select dynamic reading thresholds without knowing cell level distributions, and present several error-correcting schemes. Analysis based on Gaussian noise models reveals that bit error probabilities can be significantly reduced by using dynamic thresholds instead of fixed thresholds, hence leading to a higher information rate. 2011 IEEE.

name of conference

• 2011 IEEE International Symposium on Information Theory Proceedings

authors

• Jiang, Anxiao (Andrew)

published proceedings

• 2011 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY PROCEEDINGS (ISIT)

author list (cited authors)

• Zhou, H., Jiang, A. A., & Bruck, J.

citation count

• 36

complete list of authors

• Zhou, Hongchao||Jiang, Anxiao Andrew||Bruck, Jehoshua

publication date

• January 2011

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

Digital Object Identifier (DOI)

• 10.1109/isit.2011.6033936

International Standard Book Number (ISBN) 13

• 9781457705953

start page

• 2143

end page

• 2147

URL

• http://dx.doi.org/10.1109/isit.2011.6033936