On the Capacity and Programming of Flash Memories Academic Article

abstract

• Flash memories are currently the most widely used type of nonvolatile memories. A flash memory consists of floating-gate cells as its storage elements, where the charge level stored in a cell is used to represent data. Compared to magnetic recording and optical recording, flash memories have the unique property that the cells are programmed using an iterative procedure that monotonically shifts each cell's charge level upward toward its target value. In this paper, we model the cell as a monotonic storage channel, and explore its capacity and optimal programming. We present two optimal programming algorithms based on a few different noise models and optimization objectives. 2012 IEEE.

authors

• Jiang, Anxiao (Andrew)

published proceedings

• IEEE TRANSACTIONS ON INFORMATION THEORY

author list (cited authors)

• Jiang, A. A., Li, H., & Bruck, J.

citation count

• 9

complete list of authors

• Jiang, Anxiao Andrew||Li, Hao||Bruck, Jehoshua

publication date

• March 2012

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE TRANSACTIONS ON INFORMATION THEORY  Journal

keywords

• Capacity
• Data Storage
• Flash Memory

Digital Object Identifier (DOI)

• 10.1109/TIT.2011.2177755

start page

• 1549

end page

• 1564

volume

• 58

issue

• 3

URL

• http://dx.doi.org/10.1109/tit.2011.2177755