Dielectric Barrier Discharge Control and Flow Acceleration Enhancement by Diode Surface
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abstract
Experiments show the possibility of the discharge initiation over structured "diode" surface in SDBD geometry. Discharges of different polarities have significantly different structure and propagation dynamics with compare to each other and discharge over plain surface. The semiconducting array device operating with the voltage applied across the device and without a lower electrode (behind the array) shows strong suppression of discharges driven with bias in the conducting direction. The semiconducting dielectric barrier discharge device operating with a lower electrode is seen to suppress the backward breakdown phenomenon at pressures from 100 to 400 Torr with 8 kV pulses on the order of 25 nsec in duration. The measured dynamics resistance of 5k suggests that the time between pulse rise and fall should be on the order of 100 nsec to assure sufficient loss in the conductivity of the air in order to avoid backward breakdown at higher voltages. The semiconducting DBD produces electrostatic thrust a factor of two more than the standard DBD operating at 10 kV.
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51st AIAA Aerospace Sciences Meeting including the New Horizons Forum and Aerospace Exposition
