n304321SE Academic Article uri icon

abstract

  • 2017 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group. We describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along 110-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations.

published proceedings

  • Materials Research Letters

author list (cited authors)

  • Chen, D. i., Li, N., Yuryev, D., Wen, J., Baldwin, K., Demkowicz, M. J., & Wang, Y.

publication date

  • January 1, 2017 11:11 AM