Imaging the in-plane distribution of helium precipitates at a Cu/V interface Academic Article

abstract

• 2017 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group. We describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along 110-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations.

authors

• Demkowicz, Michal

published proceedings

• MATERIALS RESEARCH LETTERS

author list (cited authors)

• Chen, D. i., Li, N., Yuryev, D., Wen, J., Baldwin, K., Demkowicz, M. J., & Wang, Y.

citation count

• 23

complete list of authors

• Chen, Di||Li, Nan||Yuryev, Dina||Wen, Juan||Baldwin, Kevin||Demkowicz, Michael J||Wang, Yongqiang

publication date

• September 2017

publisher

• Taylor & Francis  Publisher

published in

• MATERIALS RESEARCH LETTERS  Journal

keywords

• Helium Precipitates
• Interfaces
• Ion Implantation
• Metal Nanocomposites
• Physical Vapor Deposition

Digital Object Identifier (DOI)

• 10.1080/21663831.2017.1287132

start page

• 335

end page

• 342

volume

• 5

issue

• 5

URL

• http://dx.doi.org/10.1080/21663831.2017.1287132