Imaging the in-plane distribution of helium precipitates at a Cu/V interface Academic Article uri icon

abstract

  • © 2017 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group. We describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along ⟨110⟩-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations.

author list (cited authors)

  • Chen, D. i., Li, N., Yuryev, D., Wen, J., Baldwin, K., Demkowicz, M. J., & Wang, Y.

citation count

  • 15

publication date

  • February 2017