Dynamic annealing in Ge studied by pulsed ion beams. Academic Article uri icon

abstract

  • The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. Here, we study the dynamics of radiation defects in Ge in the temperature range of 100-160C under pulsed beam irradiation with 500keV Ar ions when the total ion fluence is split into a train of equal square pulses. By varying the passive portion of the beam duty cycle, we measure a characteristic time constant of dynamic annealing, which rapidly decreases from ~8 to 0.3ms with increasing temperature. By varying the active portion of the beam duty cycle, we measure an effective diffusion length of ~38nm at 110C. Results reveal a major change in the dominant dynamic annealing process at a critical transition temperature of ~130C. The two dominant dynamic annealing processes have an order of magnitude different activation energies of 0.13 and 1.3eV.

published proceedings

  • Sci Rep

altmetric score

  • 0.25

author list (cited authors)

  • Wallace, J. B., Bayu Aji, L. B., Shao, L., & Kucheyev, S. O.

citation count

  • 5

complete list of authors

  • Wallace, JB||Bayu Aji, LB||Shao, L||Kucheyev, SO

publication date

  • October 2017