Dynamic annealing in Ge studied by pulsed ion beams Academic Article uri icon


  • The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. Here, we study the dynamics of radiation defects in Ge in the temperature range of 100-160 °C under pulsed beam irradiation with 500 keV Ar ions when the total ion fluence is split into a train of equal square pulses. By varying the passive portion of the beam duty cycle, we measure a characteristic time constant of dynamic annealing, which rapidly decreases from ~8 to 0.3 ms with increasing temperature. By varying the active portion of the beam duty cycle, we measure an effective diffusion length of ~38 nm at 110 °C. Results reveal a major change in the dominant dynamic annealing process at a critical transition temperature of ~130 °C. The two dominant dynamic annealing processes have an order of magnitude different activation energies of 0.13 and 1.3 eV.

altmetric score

  • 0.5

author list (cited authors)

  • Wallace, J. B., Bayu Aji, L. B., Shao, L., & Kucheyev, S. O.

citation count

  • 3

publication date

  • December 2017