Dynamic annealing in Ge studied by pulsed ion beams.
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The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. Here, we study the dynamics of radiation defects in Ge in the temperature range of 100-160C under pulsed beam irradiation with 500keV Ar ions when the total ion fluence is split into a train of equal square pulses. By varying the passive portion of the beam duty cycle, we measure a characteristic time constant of dynamic annealing, which rapidly decreases from ~8 to 0.3ms with increasing temperature. By varying the active portion of the beam duty cycle, we measure an effective diffusion length of ~38nm at 110C. Results reveal a major change in the dominant dynamic annealing process at a critical transition temperature of ~130C. The two dominant dynamic annealing processes have an order of magnitude different activation energies of 0.13 and 1.3eV.