Techniques for improving SIMS depth resolution: C60arrange="stagger"+ primary ions and backside depth profile analysis Conference Paper uri icon

abstract

  • We are evaluating methods to improve depth resolution for SIMS analyses of semiconductors. Two methods that show promise are: (1) backside depth profile analysis and (2) the use of cluster primary ion beams. Backside analysis improves depth resolution by eliminating sample-induced artifacts caused by sputtering through processing layers on the front side of the wafer. Mechanical backside sample preparation however, also introduces artifacts. The most troublesome artifact is inclined (non-planar) polishing. Using a combination of both secondary ion image depth profiling and image analysis techniques, the effects of inclined polishing are minimized. A Buckminsterfullerene C 60+ primary ion source has been interfaced to a magnetic sector SIMS instrument for the purpose of depth profile analysis. Application of this source to NIST SRM 2135a (nickel/ chromium multilayer depth profile standard) demonstrated that all layers of this standard were completely resolved. Initial applications of C60+ to silicon have produced some unexpected results that are not completely understood at this time. Research is underway to evaluate the application of C60+ primary ions to silicon semiconductors and other materials of interest. © 2005 American Institute of Physics.

author list (cited authors)

  • Windsor, E., Gillen, G., Bright, D., Chi, P., Fahey, A., & Batteas, J.

publication date

  • September 2005

publisher

  • AIP  Publisher