Raman spectroscopy studies of dopant activation and free electron density of In(0.53)Ga(0.47)As via sulfur monolayer doping.
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abstract
We present a Raman spectroscopy study of electron-phonon coupling in In0.53Ga0.47As epilayers doped via the sulfur-monolayer doping method. A high-frequency coupled mode (HFCM) detected above 400 cm(-1) shifts with increasing charge carrier density and allows for extraction of the activated dopant concentrations.