Raman spectroscopy studies of dopant activation and free electron density of In(0.53)Ga(0.47)As via sulfur monolayer doping. Academic Article uri icon

abstract

  • We present a Raman spectroscopy study of electron-phonon coupling in In0.53Ga0.47As epilayers doped via the sulfur-monolayer doping method. A high-frequency coupled mode (HFCM) detected above 400 cm(-1) shifts with increasing charge carrier density and allows for extraction of the activated dopant concentrations.

published proceedings

  • Phys Chem Chem Phys

author list (cited authors)

  • Kort, K. R., Hung, P. Y., Lysaght, P. D., Loh, W., Bersuker, G., & Banerjee, S.

citation count

  • 11

complete list of authors

  • Kort, Kenneth R||Hung, PY||Lysaght, Patrick D||Loh, Wei-Yip||Bersuker, Gennadi||Banerjee, Sarbajit

publication date

  • April 2014