Raman spectroscopy studies of dopant activation and free electron density of In 0.53 Ga 0.47 As via sulfur monolayer doping Academic Article uri icon

abstract

  • We present a Raman spectroscopy study of electron-phonon coupling in In0.53Ga0.47As epilayers doped via the sulfur-monolayer doping method. A high-frequency coupled mode (HFCM) detected above 400 cm(-1) shifts with increasing charge carrier density and allows for extraction of the activated dopant concentrations.

author list (cited authors)

  • Kort, K. R., Hung, P. Y., Lysaght, P. D., Loh, W., Bersuker, G., & Banerjee, S.

citation count

  • 11

publication date

  • February 2014