Spectroscopic determination of the two-dimensional vibrational potential energy surfaces for the ring-puckering and ring-flapping modes of indan in its S-0 and S-1(pi,pi(*)) electronic states
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The vapor-phase far-infrared, mid-infrared, Raman, ultraviolet and laser-induced fluorescence spectra of indan were analyzed. The ring-puckering and ring-flapping energy levels for the S0 ground state were reassigned using far-infrared spectra and Raman and dispersed fluorescence spectra of jet-cooled molecules. The flapping and puckering levels in the S1 electron excited state were assigned using fluorescence excitation spectra of jet-cooled indan and ultraviolet absorption spectra.