Application of high energy ion beam on the control of boron diffusion Conference Paper

abstract

• Anomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

authors

• Shao, Lin

published proceedings

• Materials Research Society Symposium - Proceedings

author list (cited authors)

• Chu, W. K., Shao, L., & Liu, J.

complete list of authors

• Chu, WK||Shao, L||Liu, J

publication date

• December 2003

published in

• MRS Online Proceedings Library  Journal

start page

• 297

end page

• 300

volume

• 792