Study on interfacial dislocations of Si substrate/epitaxial layer by defect trapping Academic Article

abstract

• A defect decoration technique has been developed to study evolution of interfacial dislocations. We have found that the interface of Si/Si layer, grown by molecular beam epitaxy, is a strong sink for self-interstitials during MeV bombardment at room temperature. Trapped Si interstitials at the interface were quantitatively measured by Rutherford backscattering spectrometry. The amount of trapped interstitials in the sample with various pre-bombardment annealing indicates a weak binding of stored Si atoms at interfacial dislocations. 2004 Elsevier B.V. All rights reserved.

authors

• Shao, Lin

published proceedings

• Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

• Shao, L., Wang, X., Rusakova, I., Chen, H., Liu, J., Thompson, P. E., van der Heide, P., & Chu, W.

citation count

• 0

complete list of authors

• Shao, Lin||Wang, Xuemei||Rusakova, Irene||Chen, Hui||Liu, Jiarui||Thompson, Phillip E||van der Heide, PAW||Chu, Wei-Kan

publication date

• June 2004

publisher

• Elsevier  Publisher

published in

• Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  Journal

Digital Object Identifier (DOI)

• 10.1016/j.nimb.2004.01.192

start page

• 938

end page

• 941

volume

• 219

issue

• 1-4

URL

• http://dx.doi.org/10.1016/j.nimb.2004.01.192