Study on interfacial dislocations of Si substrate/epitaxial layer by defect trapping
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A defect decoration technique has been developed to study evolution of interfacial dislocations. We have found that the interface of Si/Si layer, grown by molecular beam epitaxy, is a strong sink for self-interstitials during MeV bombardment at room temperature. Trapped Si interstitials at the interface were quantitatively measured by Rutherford backscattering spectrometry. The amount of trapped interstitials in the sample with various pre-bombardment annealing indicates a weak binding of stored Si atoms at interfacial dislocations. 2004 Elsevier B.V. All rights reserved.