Stability of shallow junctions: Issue and solution
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We have shown that p +/n junctions formed by ultra low energy B ion implantation and spike rapid thermal annealing (RTA) are not stable during subsequent thermal processes. Anomalous diffusion of boron during the post-RTA furnace annealing has been observed. Such instability was also observed for junctions formed by molecular beam epitaxy growth. Supersaturation of Si interstitials due to coupled boron diffusion is believed to cause the instability. Modeling with specific boundary condition gives a good account of the data over a range of annealing times. Furthermore, we have shown that the technique of point defect engineering with a MeV implantation can effectively stabilize junctions.