Structure and Electrical Properties of Ho-modified Sr2Bi4 Ti5O18 Lead-free Piezoelectric Ceramics
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abstract
Bismuth layer-structured Sr2Bi4-xHo xTi5O18 (x = 0.0, 0.1, 0.2, 0.3) ceramics were prepared by solid state reaction. X-ray diffraction pattern showed that pure bismuth-layered structure of SBTi was not affected by Ho-doping. SEM images showed that dense microstructures with uniform gain size were obtained in all samples. Dielectric, ferroelectric and piezoelectric properties of Sr 2Bi4-xHoxTi5O18 ceramics were also investigated. Results showed that Ho-doping caused the Curie temperature of SBTi ceramics to shift to lower temperature and decreased the dielectric loss. In addition, the remnant polarization and the piezoelectric constant decreased with the increasing of Ho-doping content. 2011 IEEE.
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2011 International Symposium on Applications of Ferroelectrics (ISAF/PFM) and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
2011 International Symposium on Applications of Ferroelectrics (ISAF/PFM) and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
author list (cited authors)
Chen, Q., Xu, Z., Chu, R., Liu, Y., Chen, M., Shao, L., & Li, G.