A new iterative process for accurate analysis of displaced atoms from channeling Rutherford backscattering spectrometry Academic Article uri icon

abstract

  • We have developed an iterative process to distinguish the yield contribution of the channeled He ions directly backscattered by displaced atoms and the yield contribution from the dechanneled He ions backscattered by lattice displaced atoms in channeling Rutherford backscattering spectrometry (RBS). The iterative process is able to accurately calculate the dechanneled fraction, the directly backscattered fraction and the dechanneling cross-section. It can also improve the accuracy of quantitative analysis of disorder profiles in monocrystalline solids by using channeling RBS. We demonstrate this technique by applying it to the measurement of the disorders in Si induced by 60 keV 1H+ ion implantation to a fluence of 7 1016 cm-2. 2006 Elsevier B.V. All rights reserved.

published proceedings

  • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

  • Shao, L., Wang, Y. Q., & Nastasi, M.

citation count

  • 3

complete list of authors

  • Shao, Lin||Wang, YQ||Nastasi, M

publication date

  • August 2006