Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation Academic Article uri icon

abstract

  • Reducing the effects of energy nonmonochromaticity of B ion beams on shallow junction formation by using point defect engineering (PDE) was discussed. Boron implantation was performed using a high beam current, ultralow energy implanter. It was suggested PDE can reduce boron clustering and enhance boron activation. It was also suggested that shallower and sharper box-like boron junctions can be achieved by PDE with sub-ke V B implants with highly monoenergetic beams.

author list (cited authors)

  • Shao, L., Chen, J., Zhang, J., Tang, D., Patel, S., Liu, J., Wang, X., & Chu, W.

citation count

  • 4

publication date

  • July 2004