Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation
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Reducing the effects of energy nonmonochromaticity of B ion beams on shallow junction formation by using point defect engineering (PDE) was discussed. Boron implantation was performed using a high beam current, ultralow energy implanter. It was suggested PDE can reduce boron clustering and enhance boron activation. It was also suggested that shallower and sharper box-like boron junctions can be achieved by PDE with sub-ke V B implants with highly monoenergetic beams.
author list (cited authors)
Shao, L., Chen, J., Zhang, J., Tang, D., Patel, S., Liu, J., Wang, X., & Chu, W.