Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation Academic Article uri icon

abstract

  • We have shown that energy contamination introduced by deceleration technology, for increasing the beam currents available for low energy boron implants, can affect fabricated junctions adversely. Energy contamination at a level of 0.1% can extend the profile of 0.5 keV B implants 10 nm deeper after a 1050C spike annealing. A highly monoenergetic beam with energy contamination less than 0.1% is required for submicron devices. Furthermore, we have used MeV implantation as a technique of point defect engineering (PDE) to control boron diffusion. PDE can reduce boron clustering and enhance boron activation. Diffusion of B in the tail region has been reduced significantly and the boron profile is much sharper. PDE lowers the critical requirement for beam purity. We conclude that shallower and sharper box-like boron junctions can be achieved by PDE with sub-keV B implants with highly monoenergetic beams.

published proceedings

  • Journal of Applied Physics

author list (cited authors)

  • Shao, L., Chen, J., Zhang, J., Tang, D., Patel, S., Liu, J., Wang, X., & Chu, W.

citation count

  • 4

complete list of authors

  • Shao, Lin||Chen, John||Zhang, Jianming||Tang, D||Patel, Sanjay||Liu, Jiarui||Wang, Xuemei||Chu, Wei-Kan

publication date

  • July 2004