Reduction of boride enhanced diffusion in MeV-implanted silicon Academic Article uri icon

abstract

  • We demonstrated that implantation of MeV Si ions into a Si substrate can suppress boride-enhanced diffusion (BED) normally associated with a high B concentration layer. In this study, a molecular-beam-epitaxy grown Si layer with a B concentration of 1021/cm3 over a 10 nm region capped with 100 nm Si was used as a source of BED. A sequence of four B delta-doped layers with 100 nm Si spacers was grown prior to the source layer to monitor the diffusion. Half of the sample was implanted with 1 MeV Si ions at a dose of 1016/cm2, followed by annealing at 800, 900, and 1000C for different periods of time. For control samples without the MeV Si implant, BED was observed with enhancements of around 40 while the MeV Si-implanted sample showed a reduced, yet nonvanishing, BED with an enhancement of around 8 after annealing at 800C for 1 h. Both BED and suppressed BED with MeV implant show transient behavior with decay after annealing for long periods of time. The effect of high energy implant on B diffusion from surface deposited B layer was also discussed.

published proceedings

  • Journal of Applied Physics

author list (cited authors)

  • Shao, L., Thompson, P. E., Bleiler, R. J., Baumann, S., Wang, X., Chen, H., Liu, J., & Chu, W.

citation count

  • 12

complete list of authors

  • Shao, Lin||Thompson, Phillip E||Bleiler, Roger J||Baumann, Scott||Wang, Xuemei||Chen, Hui||Liu, Jiarui||Chu, Wei-Kan

publication date

  • November 2002