Response function during oxygen sputter profiling and its application to deconvolution of ultrashallow B depth profiles in Si
- Additional Document Info
- View All
Decay length of B yields by secondary ion mass spectrometry (SIMS) with a B δlayer deposited on the Si layer was discussed. Electron-gun evaporation combined with liquid nitrogen cooling of target was used. Deconvolution with the response function was applied to reconstruct the spatial distribution of ultra-low-energy B implants. The results show the decay length as a linear function of the incident oxygen energy.
author list (cited authors)
Shao, L., Liu, J., Wang, C., B., K. i., Zhang, J., Chen, J., ... Chu, W.