Response function during oxygen sputter profiling and its application to deconvolution of ultrashallow B depth profiles in Si Academic Article uri icon

abstract

  • Decay length of B yields by secondary ion mass spectrometry (SIMS) with a B ╬┤layer deposited on the Si layer was discussed. Electron-gun evaporation combined with liquid nitrogen cooling of target was used. Deconvolution with the response function was applied to reconstruct the spatial distribution of ultra-low-energy B implants. The results show the decay length as a linear function of the incident oxygen energy.

author list (cited authors)

  • Shao, L., Liu, J., Wang, C., B., K. i., Zhang, J., Chen, J., ... Chu, W.

publication date

  • January 1, 2003 11:11 AM