Co-doping effects and electrical transport in In–N doped zinc oxide Academic Article uri icon

abstract

  • The influence of indium concentrations on electrical properties of In-N co-doped ZnO thin films has been studied. Based on Hall-effect measurements and analyses, impurity scattering is the dominant mechanism determining the diminished mobility in ZnO with higher In concentration. X-ray photoelectron spectroscopy reveals that the presence of In enhances the solubility of N with the formation of In-N and Zn-N bonds. The optimal properties, namely resistivity of 16.1 Ω cm and Hall mobility of 1.13 cm2 V-1 s-1, are obtained at an indium concentration of 0.14 at.%. The diffraction angle of co-doped ZnO is closest to that of un-doped ZnO. © 2006 Elsevier B.V. All rights reserved.

author list (cited authors)

  • Chen, L. L., Ye, Z. Z., Lu, J. G., He, H. P., Zhao, B. H., Zhu, L. P., Chu, P. K., & Shao, L.

citation count

  • 15

complete list of authors

  • Chen, LL||Ye, ZZ||Lu, JG||He, HP||Zhao, BH||Zhu, LP||Chu, Paul K||Shao, L

publication date

  • December 2006