Measurements of the stopping powers of He ions incident along the different channel axes and channel planes of Si
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One serious issue limiting the accuracy of Rutherford backscattering spectrometry (RBS) is that the stopping powers of channeled and non-channeled particles differ substantially. Consequently, it brings errors not only in the energy-depth conversion of RBS spectra, but also in the quantitative analysis of the disorder profile. In this study, we present measurements of the stopping powers of 4He+ ions channeled along crystallographic axes of Si1 0 0, 1 1 0, 1 1 1, and also along crystallographic planes of (1 0 0) and (1 1 0) in the energy region of 0.6-2 MeV. The aim of this study is to provide an accurate energy-depth conversion for channeling RBS data. 2006 Elsevier B.V. All rights reserved.