Non-linear effect of copper cluster ions induced damage in silicon Academic Article

abstract

• We have observed a strong non-linear effect in copper cluster ions induced damage in silicon. Copper cluster ions Cun (n=1,2,...,7) were extracted from a source of negative ions by cesium sputtering. P-type silicon wafers were irradiated with copper cluster ions at an atomic dosage range of 8 1012 to 1 1015 atoms/cm2 at the energy of 6 keV/atom. The quantitative characterization of the cluster ion induced damage was performed by Rutherford backscattering spectrometry/channeling analysis. Comparison with analytical overlapping model shows very good agreement. 2002 Elsevier Science B.V. All rights reserved.

authors

• Shao, Lin

published proceedings

• Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

• Wang, X. M., Chen, H., Shao, L., Liu, J. R., & Chu, W. K.

citation count

• 9

complete list of authors

• Wang, XM||Chen, H||Shao, L||Liu, JR||Chu, WK

publication date

• November 2002

publisher

• Elsevier  Publisher

published in

• Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  Journal

Digital Object Identifier (DOI)

• 10.1016/s0168-583x(02)01301-0

start page

• 100

end page

• 104

volume

• 196

issue

• 1-2

URL

• http://dx.doi.org/10.1016/s0168-583x(02)01301-0