H-induced platelet and crack formation in hydrogenated epitaxial SiSi0.98B0.02Si structures Academic Article uri icon

abstract

  • An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial SiSi0.98B0.02Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98B0.02 layer. For hydrogenated Si containing a 130nm thick Si0.98B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98B0.02 layer to 3nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.

published proceedings

  • Applied Physics Letters

author list (cited authors)

  • Shao, L., Lin, Y., Swadener, J. G., Lee, J. K., Jia, Q. X., Wang, Y. Q., ... Lau, S. S.

citation count

  • 13

complete list of authors

  • Shao, Lin||Lin, Yuan||Swadener, JG||Lee, JK||Jia, QX||Wang, YQ||Nastasi, M||Thompson, Phillip E||Theodore, N David||Alford, TL||Mayer, JW||Chen, Peng||Lau, SS

publication date

  • January 2006