GaN nanorod assemblies on self-implanted (111) Si substrates Academic Article

abstract

• Periodic arrays of GaN nanostructures are fabricated by MBE growth on self-implanted (1 1 1) Si substrates. Nanocapillary condensation is found to be an effective catalytic process fostering the formation of epitaxially aligned GaN nanorods in company with the thin film matrix. Changes of Si substrate surface morphology prior to deposition as a result of ion bombardments are responsible for the enhanced nanorod growth. This is attributed to the nanocapillary condensation of Ga droplets that serve as a medium to the vapor-liquid-solid growth of nanorods out of its supporting matrix. 2006 Elsevier B.V. All rights reserved.

authors

• Shao, Lin

published proceedings

• Microelectronic Engineering

author list (cited authors)

• Seo, H. W., Chen, Q. Y., Tu, L. W., Chen, M., Wang, X. M., Hsiao, C. L., ... Chu, W.

citation count

• 4

complete list of authors

• Seo, HW||Chen, QY||Tu, LW||Chen, M||Wang, XM||Hsiao, CL||Tu, YJ||Shao, L||Lozano, O||Chu, Wei-Kan

publication date

• April 2006

publisher

• Elsevier  Publisher

published in

• Microelectronic Engineering  Journal

Digital Object Identifier (DOI)

• 10.1016/j.mee.2006.01.258

start page

• 1714

end page

• 1717

volume

• 83

issue

• 4-9

URL

• http://dx.doi.org/10.1016/j.mee.2006.01.258