Non-linear effect of gold cluster ion induced damage in silicon
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We observed as much as 50% more damage for Au-cluster ion implantation in Si as compared with that of the Au monomer in the energy range of 6 keV/atom. This is contrary to the literature where the linear damage result was reported. In this experiment, small gold clusters Aun with n from 1 to 4 were used. Energy of 6 keV per Au atom was applied to bombard the Si single-crystal surface. The radiation damage was characterized by Rutherford backscattering spectrometry/channeling in the number of Si atom displacements per Au atom. We have also studied this non-linear effect in a wide range of fluences from 8 1012 to 1.2 1015 Au-atoms/cm2 and observed a fluence-dependent effect. At higher fluence, sputtering and overlapping of the damage will reduce the damage efficiency, therefore reducing the non-linear effect. This could be the reason that earlier publication did not observe the non-linear effect. 2002 Elsevier Science B.V. All rights reserved.