Non-linear effect of gold cluster ion induced damage in silicon Academic Article uri icon

abstract

  • We observed as much as 50% more damage for Au-cluster ion implantation in Si as compared with that of the Au monomer in the energy range of 6 keV/atom. This is contrary to the literature where the linear damage result was reported. In this experiment, small gold clusters Aun with n from 1 to 4 were used. Energy of 6 keV per Au atom was applied to bombard the Si single-crystal surface. The radiation damage was characterized by Rutherford backscattering spectrometry/channeling in the number of Si atom displacements per Au atom. We have also studied this non-linear effect in a wide range of fluences from 8 1012 to 1.2 1015 Au-atoms/cm2 and observed a fluence-dependent effect. At higher fluence, sputtering and overlapping of the damage will reduce the damage efficiency, therefore reducing the non-linear effect. This could be the reason that earlier publication did not observe the non-linear effect. 2002 Elsevier Science B.V. All rights reserved.

published proceedings

  • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

  • Liu, J. R., Wang, X. M., Shao, L., Chen, H., & Chu, W. K.

citation count

  • 6

complete list of authors

  • Liu, JR||Wang, XM||Shao, L||Chen, H||Chu, WK

publication date

  • November 2002