Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique
- Additional Document Info
- View All
The interfacial dislocation of Si substrate/epitaxial layer by self-interstitial decoration technique was presented. The trapped Si interstitials at the interface were quantitatively measured by Rutherford backscattering spectrometry. It was shown that the interface of Si/Si layer, grown by molecular-beam epitaxy is a strong sink for self-interstitials during MeV bombardment at room temperature.
author list (cited authors)
Shao, L., Wang, X., Rusakova, I., Chen, H., Liu, J., Thompson, P. E., & Chu, W.