Reduction of boride-enhanced diffusion by point defect engineering and its application for shallow junction formation Academic Article uri icon

abstract

  • Point defect engineering using high energy ion bombardment can be used as a method to inject vacancies near the surface region with excessive interstitials created near the end of the projected range. We demonstrated that implantation of MeV Si ions into a Si substrate can suppress boride-enhanced diffusion normally associated with a high B concentration layer. The concept of boron diffusion control can be used as an approach to form ultra-shallow junction. 2003 Elsevier Science B.V. All rights reserved.

published proceedings

  • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

  • Shao, L., Liu, J., Wang, X., Chen, H., Thompson, P. E., & Chu, W.

citation count

  • 5

complete list of authors

  • Shao, Lin||Liu, Jiarui||Wang, Xuemei||Chen, Hui||Thompson, Phillip E||Chu, Wei-Kan

publication date

  • May 2003