Ultra-shallow Junction Formation via GeB- ion Implantation of Si Conference Paper uri icon

abstract

  • AbstractGeB Cluster ions have been used to effectively produce 0.65-2keV boron for low energy ion implantation. We have generated the GeB cluster ions using the SNICS ion source (source of negative ion by cesium sputtering). Shallow junctions have been made by the GeB cluster ions implanting into Si substrates at 15keV, 11015/cm2 and 5keV, 51014/cm2. The junction depth as small as 37nm has been achieved by rapid thermal annealing of the 5 keV sample at 1000C for 1 second. A two-step annealing was also performed to study the diffusion of B in the GeB ion cluster implanted Si by annealing the 15 keV implanted sample at 550C/300sec+1000C/10sec. We found that the junction depth of the two-step annealed sample was only half of the one-step annealed sample. TEM (transmission electron microscopy) showed clear recrystallization of the amorphized layer with no observable residual defects. We briefly discussed the role of Ge in regards to reduction of the junction depth.

published proceedings

  • MRS Advances

author list (cited authors)

  • Lu, X., Shao, L., Jin, J., Li, Q., Rusakova, I., Chen, Q. Y., ... Ling, P.

citation count

  • 4

complete list of authors

  • Lu, Xinming||Shao, Lin||Jin, Jianyue||Li, Qinmian||Rusakova, I||Chen, QY||Liu, Jiarui||Chu, Wei-Kan||Ling, Peiching

publication date

  • December 2000