Non-linear effect on radiation damage of silicon by cluster ion bombardment Academic Article

abstract

• Due to the spatial and temporal close proximity of cluster ion bombardment on Silicon, radiation damage of Si due to cluster ions cannot be extrapolated from that of atomic ions. In this paper we overview our recent observations of radiation damage in Si by clusters of C and Au aggregates of up to 10 atoms and 4 atoms respectively. Quantification of damage is made by RBS/channeling. We observed hyper linear radiation damage depending on cluster size. We developed a theoretical interpretation of this observation using a collision cascade overlapping model. 2002 Elsevier Science B.V. All rights reserved.

authors

• Shao, Lin

published proceedings

• Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

• Liu, J., Wang, X., Shao, L., Lu, X., & Chu, W.

citation count

• 14

complete list of authors

• Liu, Jiarui||Wang, Xuemei||Shao, Lin||Lu, Xinming||Chu, Wei-Kan

publication date

• May 2002

publisher

• Elsevier  Publisher

published in

• Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  Journal

Digital Object Identifier (DOI)

• 10.1016/s0168-583x(01)01305-2

start page

• 787

end page

• 791

volume

• 190

issue

• 1-4

URL

• http://dx.doi.org/10.1016/s0168-583x(01)01305-2