Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth Academic Article uri icon

abstract

  • The use of point-defect engineering (PDE) to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth was discussed. It was found that with the MeV implantation, the as-implanted B profile became slightly deeper due to recoil implantation. The analysis showed that the PDE process was advantageous for postgrowth thermal processes above 700°C.

altmetric score

  • 3

author list (cited authors)

  • Shao, L., Thompson, P. E., Bennett, J., Dharmaiahgari, B. P., Trombetta, L., Wang, X., ... Chu, W.

citation count

  • 7

publication date

  • October 2003