Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth Academic Article uri icon

abstract

  • Stability of p+/n junctions remains a critical issue for device performance. We report that the technique of point-defect engineering (PDE) can substantially increase the stability of ultrashallow junctions formed by molecular-beam epitaxy. It is shown that an as-grown 15 nm, 21020/cm3 B-doped Si layer becomes unstable during 10 min thermal anneal above 650C. The thermal stability can be increased by performing a 51015/cm2 1 MeV Si ion implantation. The B profile with the MeV Si implant does not show significant diffusion during annealing up to 750C, and the final junction depth after an 800C/10min anneal is about half that of an annealed unimplanted sample. Although with Mev implantation the as-implanted B profile becomes slightly deeper due to recoil implantation, and some of the B has been electrically deactivated by the MeV implantation, PDE is advantageous for postgrowth thermal processes above 700C. The mechanism causing the instability is discussed.

published proceedings

  • Applied Physics Letters

altmetric score

  • 3

author list (cited authors)

  • Shao, L., Thompson, P. E., Bennett, J., Dharmaiahgari, B. P., Trombetta, L., Wang, X., ... Chu, W.

citation count

  • 7

complete list of authors

  • Shao, Lin||Thompson, Phillip E||Bennett, Joe||Dharmaiahgari, Bhanu P||Trombetta, Len||Wang, Xuemei||Chen, Hui||Seo, Hye-Won||Chen, Quark Y||Liu, Jiarui||Chu, Wei-Kan

publication date

  • October 2003