Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth
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The use of point-defect engineering (PDE) to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth was discussed. It was found that with the MeV implantation, the as-implanted B profile became slightly deeper due to recoil implantation. The analysis showed that the PDE process was advantageous for postgrowth thermal processes above 700°C.
author list (cited authors)
Shao, L., Thompson, P. E., Bennett, J., Dharmaiahgari, B. P., Trombetta, L., Wang, X., ... Chu, W.