Enhancement of boron solid solubility in Si by point-defect engineering Academic Article uri icon

abstract

  • The technique of point-defect engineering (PDE), with excess vacancies produced near the surface region by MeV Si ion implantation, has been applied to form ultrashallow junctions with sub-keV B implants. PDE can reduce boride-enhanced diffusion that dominates the enhanced diffusion of ultralow energy B implants. PDE can further sharpen the dopant profile and enhance boron activation. For 11015/cm2, 0.5 keV B implant, B solid solubility has been enhanced over a wide temperature range of 7501000C, with an enhancement factor of 2.5 at 900C. These features have enabled a shallower and sharper box-like boron junction achievable by PDE in combination with ultralow energy 0.5 keV B implantation.

published proceedings

  • Applied Physics Letters

altmetric score

  • 3

author list (cited authors)

  • Shao, L., Zhang, J., Chen, J., Tang, D., Thompson, P. E., Patel, S., ... Chu, W.

citation count

  • 19

complete list of authors

  • Shao, Lin||Zhang, Jianming||Chen, John||Tang, D||Thompson, Phillip E||Patel, Sanjay||Wang, Xuemei||Chen, Hui||Liu, Jiarui||Chu, Wei-Kan

publication date

  • April 2004