Enhancement of boron solid solubility in Si by point-defect engineering
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The application of point-defect engineering (PDE) to enhance the solid solubility of boron (B) in Si was discussed. It was observed that the PDE was used to control boron transient enhanced diffusion (TED) and boride-enhanced diffusion (BED). The boron solid solubility was enhanced by an enhancement factor of 2.5 at 900°C over 750-100°C range, foe 1×10 15/cm 2, 0.5 keV B implant. It was found that the PDE reduced the boron clustering and enhanced boron activation. The results show that the shallow and sharp box-like boron junctions are achieved by PDE with ultralow energy 0.5 keV B implantation.
author list (cited authors)
Shao, L., Zhang, J., Chen, J., Tang, D., Thompson, P. E., Patel, S., ... Chu, W.