A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis
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By combining elastic recoil detection analysis with the channeling technique, energy analysis of forward-scattered H1 permits determination of the H1 lattice location. We have used this technique to study the lattice location of hydrogen in a crystalline Si containing a buried boron-doped layer. We showed that hydrogen atoms are trapped at the boron-doped Si layer after hydrogenation and that the majority of the trapped hydrogen atoms are located near bond-center sites. © 2005 American Institute of Physics.
author list (cited authors)
Shao, L., Wang, Y., Lee, J. K., Nastasi, M., Thompson, P. E., Theodore, N. D., & Mayer, J. W.