A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis Academic Article uri icon

abstract

  • By combining elastic recoil detection analysis with the channeling technique, energy analysis of forward-scattered H1 permits determination of the H1 lattice location. We have used this technique to study the lattice location of hydrogen in a crystalline Si containing a buried boron-doped layer. We showed that hydrogen atoms are trapped at the boron-doped Si layer after hydrogenation and that the majority of the trapped hydrogen atoms are located near bond-center sites. © 2005 American Institute of Physics.

author list (cited authors)

  • Shao, L., Wang, Y., Lee, J. K., Nastasi, M., Thompson, P. E., Theodore, N. D., & Mayer, J. W.

citation count

  • 1

publication date

  • September 2005