Application of high energy ion beam for the control of boron diffusion Academic Article uri icon

abstract

  • For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 1015 to 1 1016 cm-2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation. 2005 Elsevier B.V. All rights reserved.

published proceedings

  • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

  • Shao, L., Nastasi, M., Thompson, P. E., Chen, Q. Y., Liu, J., & Chu, W.

citation count

  • 0

complete list of authors

  • Shao, Lin||Nastasi, M||Thompson, Phillip E||Chen, Quark Y||Liu, Jiarui||Chu, Wei-Kan

publication date

  • January 2006