Athermal annealing at room temperature and enhanced activation of low- energy boron implants with high-energy Si coimplantation
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Interactions between shallow implanted boron and high-energy silicon implants have been investigated. Athermal annealing of implantation damage induced by low energy boron implants at room temperature was observed after coimplantation and such annealing effects were more obvious when the dosage of preimplanted Si was increased. Electrical measurements after rapid thermal annealing showed that the activation of B was greatly increased with the dosages of high-energy Si coimplantation. An enhancement of substitutional ratio of B was observed by aligned nuclear reaction analysis. © 2002 American Institute of Physics.
author list (cited authors)
Shao, L., Wang, X., Liu, J., Bennett, J., Larsen, L., & Chu, W.