Effect of substrate growth temperatures on H diffusion in hydrogenated SiSi homoepitaxial structures grown by molecular beam epitaxy Academic Article uri icon

abstract

  • We have investigated hydrogen diffusion in hydrogenated 100 SiSi homoepitaxial structures, which were grown by molecular beam epitaxy at various temperatures. The substrate growth temperature can significantly affect the H diffusion behavior, with higher growth temperatures resulting in deeper H diffusion. For the SiSi structure grown at the highest temperature of 800C, H trapping occurs at the epitaxial SiSi substrate interface, which results in the formation of (100) oriented microcracks at the interface. The mechanism of H trapping and the potential application of these findings for the development of a method of transferring ultrathin Si layers are discussed.

published proceedings

  • Journal of Applied Physics

author list (cited authors)

  • Shao, L., Lee, J. K., Wang, Y. Q., Nastasi, M., Thompson, P. E., Theodore, N. D., ... Lau, S. S.

citation count

  • 4

complete list of authors

  • Shao, Lin||Lee, JK||Wang, YQ||Nastasi, M||Thompson, Phillip E||Theodore, N David||Alford, TL||Mayer, JW||Chen, Peng||Lau, SS

publication date

  • June 2006