Effect of substrate growth temperatures on H diffusion in hydrogenated Si∕Si homoepitaxial structures grown by molecular beam epitaxy
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We have investigated hydrogen diffusion in hydrogenated 〈100〉 Si/Si homoepitaxial structures, which were grown by molecular beam epitaxy at various temperatures. The substrate growth temperature can significantly affect the H diffusion behavior, with higher growth temperatures resulting in deeper H diffusion. For the Si/Si structure grown at the highest temperature of 800°C, H trapping occurs at the epitaxial Si/Si substrate interface, which results in the formation of (100) oriented microcracks at the interface. The mechanism of H trapping and the potential application of these findings for the development of a method of transferring ultrathin Si layers are discussed. © 2006 American Institute of Physics.
author list (cited authors)
Shao, L., Lee, J. K., Wang, Y. Q., Nastasi, M., Thompson, P. E., Theodore, N. D., ... Lau, S. S.