MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si Academic Article uri icon

abstract

  • We studied the irradiation effect of 2-MeV Si ions on HfO2 films deposited on Si substrates. HfO2 films 11 nm thick were deposited onto 1 0 0 Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 1014 cm-2 at room temperature, followed by rapid thermal annealing at 1000 C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors. 2006 Elsevier B.V. All rights reserved.

published proceedings

  • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

  • Yu, X., Shao, L., Chen, Q. Y., Trombetta, L., Wang, C., Dharmaiahgari, B., ... Chu, W.

citation count

  • 9

complete list of authors

  • Yu, Xiangkun||Shao, Lin||Chen, QY||Trombetta, L||Wang, Chunyu||Dharmaiahgari, Bhanu||Wang, Xuemei||Chen, Hui||Ma, KB||Liu, Jiarui||Chu, Wei-Kan

publication date

  • August 2006