A technique to study the lattice location of light elements in silicon by channeling elastic recoil detection analysis Academic Article

abstract

• We reported an ion beam analysis technique to detect the lattice location of hydrogen in crystalline silicon by the method of channeling elastic recoil detection analysis. In this technique, the incident beam is introduced along low index channeling axes while the sample is tilted to an angle by which the forward-scattered H atoms can be detected. We have applied this technique to study the lattice location of 1H trapped within a boron-doped Si layer. 2006 Elsevier B.V. All rights reserved.

authors

• Nastasi, Michael
• Shao, Lin

published proceedings

• Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

• Shao, L., Wang, Y. Q., Nastasi, M., & Mayer, J. W.

citation count

• 2

complete list of authors

• Shao, Lin||Wang, YQ||Nastasi, M||Mayer, JW

publication date

• August 2006

publisher

• Elsevier  Publisher

published in

• Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  Journal

Digital Object Identifier (DOI)

• 10.1016/j.nimb.2006.04.004

start page

• 230

end page

• 233

volume

• 249

issue

• 1-2

URL

• http://dx.doi.org/10.1016/j.nimb.2006.04.004