Silicon dioxide thin film removal using high-power nanosecond lasers Academic Article

abstract

• High intensity nanosecond laser pulses of different wavelengths are used to remove thin film silicon dioxide coatings from the silicon surface. Films as thick as 0.7 m can be removed from the surface in one shot with very minor or no damage to the bare silicon surface. The accumulated effect of multiple-pulse irradiation is studied. It is found that multiple-pulse irradiation results in some reduction of the threshold for coating removal. However, the surface quality gets significantly worse with the increasing number of shots. 2003 Elsevier Science B.V. All rights reserved.

authors

• Yakovlev, Vladislav

published proceedings

• APPLIED SURFACE SCIENCE

altmetric score

• 3

author list (cited authors)

• Magyar, J., Sklyarov, A., Mikaylichenko, K., & Yakovlev, V.

citation count

• 11

complete list of authors

• Magyar, J||Sklyarov, A||Mikaylichenko, K||Yakovlev, V

publication date

• February 2003

publisher

• Elsevier  Publisher

keywords

• High-power Nanosecond Lasers
• Silicon Dioxide
• Thin Film

Digital Object Identifier (DOI)

• 10.1016/S0169-4332(02)01508-8

start page

• 306

end page

• 313

volume

• 207

issue

• 1-4

URL

• http://dx.doi.org/10.1016/s0169-4332(02)01508-8