Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer Academic Article uri icon

author list (cited authors)

  • Park, S. I., Ok, I., Kim, H., Zhu, F., Zhang, M., Yum, J. H., Han, Z., & Lee, J. C.

citation count

  • 5

publication date

  • August 2007