Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer
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Park, S. I., Ok, I., Kim, H., Zhu, F., Zhang, M., Yum, J. H., Han, Z., & Lee, J. C.
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Park, Sung Il||Ok, Injo||Kim, Hyoung-Sub||Zhu, Feng||Zhang, Manhong||Yum, Jung Hwan||Han, Zhao||Lee, Jack C
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http://dx.doi.org/10.1063/1.2775048