Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric Academic Article uri icon

author list (cited authors)

  • Zhao, H., Shahrjerdi, D., Zhu, F., Zhang, M., Kim, H., Injo, O. K., ... Lee, J. C.

publication date

  • January 1, 2008 11:11 AM