Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer
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Kim, H., Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., ... Majhi, P.
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Kim, Hyoung-Sub||Ok, I||Zhang, M||Zhu, F||Park, S||Yum, J||Zhao, H||Lee, Jack C||Oh, Jungwoo||Majhi, Prashant
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http://dx.doi.org/10.1063/1.2844883