Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition
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Ok, I., Kim, H., Zhang, M., Zhu, F., Park, S., Yum, J., ... Lee, J. C.
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Ok, InJo||Kim, H||Zhang, M||Zhu, F||Park, S||Yum, J||Zhao, H||Garcia, Domingo||Majhi, Prashant||Goel, N||Tsai, W||Gaspe, CK||Santos, MB||Lee, Jack C
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http://dx.doi.org/10.1063/1.2844879