DC-20 GHz CMOS LNA using novel multilayered transmission lines and inductors Academic Article

abstract

• A distributed low-noise amplifier (LNA) employing novel multilayered transmission lines and inductors is designed in a standard 0.18m CMOS process. The new LNA provides significant improvement in performance and size with less than 13dB return loss from DC to 17GHz, average gain of 80.2dB from DC to 20GHz, noise figure of 3.4-5dB from 0.5-19GHz, power consumption of 34.2mW, and 1.050.37mm2 chip size including RF pads. The Institution of Engineering and Technology 2006.

authors

• Nguyen, Cam Van

published proceedings

• Electronics Letters

author list (cited authors)

• Chirala, M. K., Guan, X., & Nguyen, C.

citation count

• 5

publication date

• November 2006

publisher

• Institution of Engineering and Technology (IET)  Publisher

keywords

• 40 Engineering
• 4006 Communications Engineering
• 4009 Electronics, Sensors And Digital Hardware

Digital Object Identifier (DOI)

• 10.1049/el:20062569

start page

• 1273

end page

• 1273

volume

• 42

issue

• 22

URL

• http://dx.doi.org/10.1049/el:20062569