DC-20 GHz CMOS LNA using novel multilayered transmission lines and inductors
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A distributed low-noise amplifier (LNA) employing novel multilayered transmission lines and inductors is designed in a standard 0.18m CMOS process. The new LNA provides significant improvement in performance and size with less than 13dB return loss from DC to 17GHz, average gain of 80.2dB from DC to 20GHz, noise figure of 3.4-5dB from 0.5-19GHz, power consumption of 34.2mW, and 1.050.37mm2 chip size including RF pads. The Institution of Engineering and Technology 2006.