Extremely wideband 0.18-μm CMOS compact distributed low-noise amplifier Conference Paper uri icon

abstract

  • A distributed low-noise amplifier (LNA) employing novel transmission lines and inductors was designed in a standard 0.18-m CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8 0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05 0.37 mm2 chip size including RF pads. 2010 IEEE.

name of conference

  • 2010 IEEE International Symposium Antennas and Propagation and CNC-USNC/URSI Radio Science Meeting

published proceedings

  • 2010 IEEE Antennas and Propagation Society International Symposium

author list (cited authors)

  • Chirala, M., Guan, X., Huynh, C., & Nguyen, C.

citation count

  • 1

complete list of authors

  • Chirala, M||Guan, X||Huynh, C||Nguyen, C

publication date

  • July 2010

publisher