Extremely wideband 0.18-m CMOS compact distributed low-noise amplifier Conference Paper

abstract

• A distributed low-noise amplifier (LNA) employing novel transmission lines and inductors was designed in a standard 0.18-m CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8 0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05 0.37 mm2 chip size including RF pads. 2010 IEEE.

name of conference

• 2010 IEEE Antennas and Propagation Society International Symposium

authors

• Nguyen, Cam Van

published proceedings

• 2010 IEEE Antennas and Propagation Society International Symposium

author list (cited authors)

• Chirala, M., Guan, X., Huynh, C., & Nguyen, C.

citation count

• 1

complete list of authors

• Chirala, M||Guan, X||Huynh, C||Nguyen, C

publication date

• July 2010

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

Digital Object Identifier (DOI)

• 10.1109/aps.2010.5561700

International Standard Book Number (ISBN) 13

• 9781424449682

start page

• 1

end page

• 4

URL

• http://dx.doi.org/10.1109/aps.2010.5561700