Design of high-performance compact CMOS distributed amplifiers with on-chip patterned ground shield inductors
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A CMOS distributed amplifier incorporating on-chip patterned ground shield (PGS) spiral inductors has been developed using a standard low-cost 0.25m CMOS process. Measured results show that this distributed amplifier has an average gain of 7dB, return loss of more than 10dB, and noise figure between 4.1-6.1dB across DC 11GHz. The amplifier occupies a small chip area of only 1.20.8 mm2, including RF pads. These represent the best results for 0.25m CMOS distributed amplifiers and demonstrate that miniaturisation and high performance can be achieved for CMOS distributed amplifiers and other wideband RFICs by implementing on-chip PGS inductors. 2009 The Institution of Engineering and Technology.